| 摘要 |
PURPOSE:To reduce the series resistance improving the linearity of optical output characteristics by a method wherein, when an embedding region with a refractive index less than that of an active region is provided on both sides of mesa semiconductor laminated region including an active layer, the conductive type of the first layer of an embedding semiconductor is made similar to that of the substrate. CONSTITUTION:The thin film laminated crystal layer comprising In0.71Ga0.29As0.61 P0.39 active layer 2, P type InP layer 3 is liquid epitaxially grown on N type InP substrate 1 and etched utilizing a mask comprising stripe type oxide film 7 to specify the value of the stripe width of the active layer 2. Next said layers 2, 3 are embedding grown to form an embedding crystal layer 41 comrising N type In0.88Ga0.12As0.25P0.75 as the first layer laminating P type InP layer 42 and N type InP layer 5 as the second layer. Through these procedures, the conductive type of the first layer 41 and the substrate 1 is made similar to each other reducing the series resistance and preventing the current leakage from the layer 41 to realize the linear optical output characteristics. |
