| 摘要 |
PURPOSE:To obtain a transistor having a high optical transmittivity for a substrate and excellent operational characteristics by a method wherein a polycrystalline semiconductor thin film of 0.1-10mum in thickness is formed on a light- transmitting insulative substrate at the prescribed temperature, and after a heat- treatment has been performed in plasmic atmoshere, containing hydrogen, fluorine and the like, at the prescribed temperature, said thin film is selectively removed by performing an etching. CONSTITUTION:A polycrystalline Si film 2 of 1-10mum in thickness is grown on a quartz substrate 1 while it is being heated at 200-1,000 deg.C, and an SiO2 film 5 of 1mum in thickness is covered on the film 2. Then, a window corresponding to source and drain regions is provided on the film 5, a P<+> ions are implanted, and an N<+> type source and drain region 6 is formed by performing a heat treatment. Subsequently, a field oxide film 7 is coated on the surface, the film 7 located between the regions 6 and on the film 6 is removed, and a heat treatment is performed in the plasma containing at least an element such as hydrogen, fluorine, chlorine, bromine and iodine, within the temperature range of 200-1,000 deg.C. Through these procedures, the grain boundary defects in the Si film 2 can be reduced. |
