| 摘要 |
PURPOSE:To stabilize early a booster circuit by rapidly shifting a switch MIS transistor to switching operation at the time of energizing a power source. CONSTITUTION:The P-N junction of an MISFET Q11 operates as a diode at the time of energizing a power source. The MISFET Q11, Q12 are not conducted, but a leakage current flows through the channel of the MISFET Q11. The P-well regions of the MISFET Q11, Q12 are isolated from the voltages of nodes a, b, and through current to discharge the charge of the well is not flowed. Accordingly, the shift from the diode operation to switching operation of the MISFET Q11 is accelerated, and the levels of condensers C1, C2 are early stabilized. |
