| 摘要 |
PURPOSE:To form a minute pattern of 1mum or less with high accuracy by coating a layer to be processed with a double-layer mask of a high molecular resin chlorinated and a resist and etching the mask. CONSTITUTION:A Mo thin-film to be processed 3 is formed onto a substrate 4, polyethylene chloride 2 and the resist 1 for far ultraviolet rays are superposed, and the resist is baked, exposed 5 and developed. The film 2 is removed through etching by the resist mask 1 by O2 plasma. An etching rate of polyethylene chloride is approximately twenty times as large as that of the resist at that time. Accordingly, the resist film can be thinned extremely as 100-300nm, and a submicron pattern is easily transferred. A window is bored to Mo 3 through a plasma etching method using Freon gas, polyethylene chloride 2 and the resist 1 are removed, and the pattern is completed. Applying various high molecular chloride resins except polyethylene chloride is also effective similarly. |
