| 摘要 |
PURPOSE:To realize a gate structure with its gate insulating film high in insulating and heat-resisting capabilities by a method wherein an oxide film of a high melt point metal is formed on a gate insulating film and the oxide film is provided with a gate electrode of said high melt point metal or its silicide. CONSTITUTION:A thick field SiO2 film 2 is formed along the circumference of a P type Si substrate 1, and a region enclosed with the SiO2 film 2 is occupied by an N<+> type source region 3 and a drain region 4 formed by diffusion. A Ta oxide film 6 is then formed on the exposed area between the regions 3 and 4 with the intermediary of a gate SiO2 film 5. A gate electrode 7 of a Ta silicide is placed to cover the Ta oxide film 6. A conventional method follows wherein a PSG film 8 is grown by CVD wherein openings are provided at places where regions 3, 4 are located and the regions 3, 4 are coated with Al electrodes 9, 10, respectively, with their ends extending on the film 8. A thermally stable Ta oxide film 6 sandwiched between the film 5 and the electrode 7 effectively prevents reaction between the electrode 7 and the film 5. |
