| 摘要 |
PURPOSE:To obtain an electrophotographic receptor superior in photosensitivity to light in a long wavelength region, durability, etc., by forming layers of amorphous silicon hydride carbide or the like in each specified thickness on both sides of a photoconductive layer of amorphous silicon hydride or fluoride or the like. CONSTITUTION:A 500nm-80mum thick layer 2 made of amorphous silicon hydride carbide (a-SiC,H) or (a-SiC,F,H) contg. 10-90atomic % C is formed on a conductive substrate 1. On this layer 2 a 500nm-5mum thick photoconductive layer 3 is formed consisting of (a-Si,H), (a-Si,F), or (a-Si,F,H). Then, a 5-200nm thick layer 4 made of (a-SiC,H) or (a-SiC,F,H) is formed contg. 40-90 atomic % C, thus obtaining a photoreceptor high in acceptance potential, photosensitivity, etc., and superior in abrasion resistance, humidity resistance, and mechanical strength. |
