| 摘要 |
PURPOSE:To decrease the increase of leakage currents in the reverse direction, to form the high-speed type semiconductor device of excellent switching characteristics in the forward direction while inhibiting the increase of a voltage drop in the forward direction, to reduce heat loss and to improve reliability by properly setting an area ratio of regions into which gold and platinum are doped as life time killers. CONSTITUTION:When an area of a section A into which gold is diffused increases, reverse leakage currents increase; when an area of a section B into which platinum is diffused increases, reverse leakage currents decrease. Consequently, reverse leakage currents can be inhibited up to set value or less by selecting an area ratio of the sections A, B. The forwared voltage drop is also determined by the area ratio of the sections A, B in the same manner, and brought to the intermediate value of each forward voltage drop in case of the separate doping of gold and platinum. The forward switching characteristics are also determined by the area ratio of the section A and the section B in the same manner, and brought to the intermediate value of the forward switching characteristics in case of the separated doping of gold and platinum. Accordingly, the area ratio of the section A and the section B may be set properly on the basis of characteristics in the diagram in order to conform various characteristics to design value or target value. |
