发明名称 FORMING MEHTOD FOR SINGLE CRYSTAL SILICON FILM
摘要 PURPOSE:To prevent the generation of convexo-concave sections and grain boundaries even through heating at approximately 500 deg.C by using laser beams, shape thereof takes a slit shape, moving laser beams or a substrate in the direction vertical to the longitudinal direction of the band of a silicon dioxide film and heating and treating the silicon film on the substrate. CONSTITUTION:The silicon film is heated and treated by using slitty neodymium- yag laser beams. A rectangular region 6 shown in a broken line indicates the shape of slitty laser beams, and the arrow indicates the scanning direction of laser beams to the substrate. Laser beams make the longitudinal direction of the band of the silicon dioxide film and the longitudinal direction of slitty laser beams 6 coincide, and are scanned vertically in the longitudinal direction of the band. When a polycrystalline silicon film 3 is coated previously with the silicon dioxide film, laser energy projected to the polycrystalline silicon film 3 can be increased, and the convexo-concave sections of the surface of the silicon film after annealing can be reduced.
申请公布号 JPS58191420(A) 申请公布日期 1983.11.08
申请号 JP19820074876 申请日期 1982.05.04
申请人 NIPPON DENKI KK 发明人 KIMURA MASAKAZU
分类号 H01L27/00;H01L21/20;H01L21/268;H01L21/86 主分类号 H01L27/00
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