发明名称 First wall and limiter surfaces for plasma devices
摘要 For a plasma device, a surface of a first wall or limiter with reduced loss of metal by erosion is provided by forming a monolayer of an alkali or alkaline earth metal on a substrate of a more negative metal. The surface exhibits a reduced loss of metal by erosion and particularly by sputtering and an increased secondary ion/neutral ratio resulting in a greater return of atoms escaping from the surface. In another aspect of the invention, the substrate includes a portion of the second metal and serves to replenish the surface layer with atoms of the second metal. In one process associated with self-generating desired surface, the metals as an alloy are selected to provide a first layer having a high concentration of the second metal in contrast to a very low concentration in the second layer and bulk to result in a surface with a monolayer of the second metal. When the combination of metals results in an intermetallic compound, selective removal of the first metal during an initial bombardment stage provides the surface layer with a predominance of the second metal.
申请公布号 US4414176(A) 申请公布日期 1983.11.08
申请号 US19810269235 申请日期 1981.06.01
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 KRAUSS, ALAN R.;GRUEN, DIETER M.
分类号 G21B1/13;(IPC1-7):G21B1/00 主分类号 G21B1/13
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