| 摘要 |
Disclosed is a method of producing semiconductor devices, comprising forming a laminate of a lower poly-Si film and an upper silicon nitride film on the substrate surface in a manner to provide a pattern of electrodes and wiring layer, removing the patterned silicon nitride film except the region in which a conductive layer is brought into contact with the underneath poly-Si film later, subjecting the substrate surface region to thermal oxidation so as to form a silicon oxide film covering the exposed surface of the substrate and the exposed surface of the poly-Si film, and removing the remaining silicon nitride film.
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