发明名称 VARIABLE RECTANGULAR SYSTEM ELECTRON-BEAM EXPOSURE DEVICE
摘要 PURPOSE:To irradiate desired shaping beams onto a sample by predetermined irradiation electron density at all times, and to form an accurate element onto the sample by setting up a means deflecting a pair of electron beams between an electron-beam generating source and a shaping slit at a first stage while providing a means measuring the current value of electron beams after passing a shaping slit at a second stage. CONSTITUTION:A computer 12 transmits the quantity of the desired shaping beams 18 deflected to an amplifier 13 so that a line dividing the long side of the desired shaping beams 18 into two equal parts passes through the center of electron density curves 17, and an irradiation electron deflector 2 deflects electron beams from the electron-beam generating source 1 only by the quantity on the basis of its output. Electron beams deflected are irradiated to the shaping slit 4 at the first stage, and reach on a shaping deflector 5. The second shaping beams 21 are irradiated to a sample base 11 through a projection lens 8 and a positioning deflector 9 through the rectangular hole 19 of the shaping slit 7, and the current value is measured by a current measuring instrument 15. The computer 12 applies correction deflection to the shaping deflector 5 up to reference electron irradiation density, and exposes the desired position of the sample 10 at a point of time when beams reach the desired shaping beams 18 agreeing with reference irradiation electron density.
申请公布号 JPS58191436(A) 申请公布日期 1983.11.08
申请号 JP19820075690 申请日期 1982.05.06
申请人 NIPPON DENKI KK 发明人 MATSUNO HIROYUKI
分类号 H01L21/027;H01J37/317;(IPC1-7):01L21/30 主分类号 H01L21/027
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