| 摘要 |
PURPOSE:To obtain the semiconductor device of glass molded type high voltage diode, etc., having gentle reaction with an etching liquid as compared with the device using only tungsten as the electrode material by a method wherein a material obtained by mixing and sintering molybdenum and tungsten is used as the electrode material. CONSTITUTION:When the high voltage diode to be formed of electrodes 1, lead wires 2, a silicon block 3 and glass 4 for the semicondutor is to be assembled, the final cleaning of a semiconductor pellet is performed using the etching liquid consisting of HF 25-10% and HNO3 75-90%. The material obtained by mixing and sintering molybdenum and tungsten is used as the electrode material, and the ratio of molybdenum is made as 30-80%. Reaction with the etching liquid is gentle, no influence according to chemical reaction is applied also to the electrode parts, and the favorably reversely directional characteristic can be obtained. At the etching liquid having gentle reaction with molybdenum, even when the ratio of molybdenum is increased up to about 80% in the vol%, the reversely directional property is stable. |
