| 摘要 |
PURPOSE:To enlarge the contact area, and to enable to obtain the multilayer wiring having small contact resistance with a small area by a method wherein the surface part containing the sides of a polycrystalline silicon wiring and aluminum wirings are made to come in contact mutually. CONSTITUTION:An N<+> type diffusion wiring layer 2 is formed on the surface of an Si substrate 1, and is connected through a contact hole 11 to the polycrystalline Si wiring layers 4, 12 formed on an insulating film 3 formed on the Si substrate 1. Multilayer wiring structure connected to the aluminum wiring layers 6, 14 through a contact hole 13 opened in an interlayer insulating film 5 is formed on the polycrystalline Si wiring layer 4 interposing the interlayer insulating film between them. The contact hole 13 is opened larger than width of the polycrystalline Si wiring layer 12, and connection is attained according to the aluminum wiring layers 6, 14 and the surface containing the sides of the polycrystalline Si wiring layer 12. |
