发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To omit middle electrode insulating bases, and to contrive to simplify lead wiring structure and to facilitate workability of the semiconductor device by a method wherein middle electrodes are arranged on one side of a semiconductor chip, and spacers are interposed between the middle electrodes and a supporting base when Al ultrasonic bonding is to be performed. CONSTITUTION:The middle electrodes 14, 15 are arranged on the same side inrelation to the semiconductor chip 10, and are fixed to outside leads 12, 13 to be supported. The directions of the first bonding and the second bonding of Al ultrasonic bonding coincide, to rotate the supporting base 11 during bonding work is unnecessary, and workability of bonding is enhanced. When the spacers 44 are arranged between the middle electrodes 14, 15 and the supporting base 11, bending deformation toward the lower side of the middle electrodes 14, 15 according to load at bonding time is not generated, the middle electrode insulating bases become useless, the number of parts is reduced, and packing structure is simplified.
申请公布号 JPS58191459(A) 申请公布日期 1983.11.08
申请号 JP19820072578 申请日期 1982.05.01
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUZAKI HITOSHI;SAKURADA SHIYUUROKU;HIRAYAMA HIDEO;MURAKAMI MASAHIRO;SUNAI SHIGEO
分类号 H01L21/60;H01L21/607;H01L23/045 主分类号 H01L21/60
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