PLASMA ETCHING APPARATUS PROVIDING PARALLEL FLAT ELECTRODE

摘要

PURPOSE:To improve uniformity of etching speed and thereby facilitate the detection of the end of etching and prevent over-etching in order to improve patterning accuracy by setting a semiconductor substrate so that it receives supply of etching gas from the area just above the center thereof. CONSTITUTION:The upper electrode 13 has the hollow structure with the etching gas blowing ports 14 provided at the surface opposing to the lower electrode 12 in such an area as located just above the positioning means of the lower electrode, while with the etching gas introducing tube 15 is provided at the surface in the other side thereof penetrating through the wall surface of a reaction chamber 17. The numeral 16 represents an exhaust hole provided penetrating through the center of the lower electrode.