| 摘要 |
PURPOSE:To reduce the residual stress which an active layer receives by a method wherein a buried layer is constituted of a semiconductor layer of composition different from that of the active layer and a semiconductor layer of the same composition as that of the active layer. CONSTITUTION:After a clad layer 12, the active layer 13, a clad layer 14, and an ohmic contact layer 15 are successively epitaxially grown on a substrate 11, mesa etching is performed from the side of a crystal growing surface to the substrate 11, and next the first and second buried layers 16 and 17 are formed by the process of epitaxial growth. A liquid epitaxial crystal growing method of sliding board system is used as the crystal growing method in this case, but it is not always necessary to use this method. An important point here is: from the viewpoint of sections parallel with the substrate 11 including the active layer 13, the first buried layer 16 constituted of N-Ga0.65Al0.35As exists only in the neighborhood of the active layer 13, and the outside thereof is surrounded by the second buried layer 17 constituted of N-GaAs. |
