METHOD AND DEVICE OF CRYSTALLIZING THIN FILM MATERIAL

摘要

When crystal particle size cannot be uniformed, it is impossible to reduce variations in TFT characteristics over the entire panel. A method of crystallizing a thin film material comprising the step of splitting a pulse-form laser into a plurality of split lasers and delaying them and irradiating a material (12, 112) with them when the thin-film-form silicon material (12, 112) is irradiated with a pulse-form laser several times to form crystals, wherein the pulse waveform (2) of one pulse-form laser formed by a plurality of superimposed split lasers has a maximum peak (23) having the maximum intensity I, at least one maximum peak (22) having an intensity exceeding I/2, and at least one minimum point (21) positioned between adjacent maximum peaks (22, 23) and having an intensity lower than I/2.