| 摘要 |
A semiconductor device having a high-k gate dielectric and its manufacturing method are provided to reduce trouble of a threshold voltage control due to a metal gate electrode layer by using a zirconium terbium oxide layer as a gate dielectric. A zirconium terbium oxide(ZrTbO) layer(240) is formed by using an ALD method to be arranged on a semiconductor substrate(200) as a gate dielectric. A barrier metal layer(250) is arranged on the zirconium terbium oxide layer. A gate electrode layer(260) is arranged on the barrier metal layer. A buffer dielectric(230) comprised of a silicon oxide layer or a silicon oxide nitride layer is arranged between the semiconductor substrate and the zirconium terbium oxide layer. The silicon oxide layer or the silicon oxide nitride layer has a thickness less than 15 Š.
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