| 摘要 |
A method for measuring a critical dimension of a trench for a sphere-typed recess channel is provided to reduce consumption of a wafer by determining the critical dimension of the trench for the sphere-typed recess channel without cutting the wafer. A trench isolation layer is formed in a first region(A) of a semiconductor substrate(200). A measuring trench is formed in a second region(B) of the semiconductor substrate. A first sphere-typed recess channel trench(221) is formed in the first region. A second sphere-typed recess channel trench(222) is formed by performing an anisotropic etch process for a lower part of the first sphere-typed recess channel trench. A critical dimension of the second sphere-typed recess channel trench is determined by measuring and comparing the measuring trench.
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