发明名称 |
GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device. ® KIPO & WIPO 2007
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申请公布号 |
KR20070001261(A) |
申请公布日期 |
2007.01.03 |
申请号 |
KR20067023021 |
申请日期 |
2006.11.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MORI YUSUKE |
发明人 |
SASAKI TADATOMO;MORI YUSUKE;YOSHIMURA MASASHI;KAWAMURA FUMIO;HIROTA RYU;NAKAHATA SEIJI |
分类号 |
C30B29/38;H01L21/20;C30B9/00;C30B9/08;C30B9/10;C30B11/00;C30B11/06;C30B29/40;H01L21/208 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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地址 |
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