| 摘要 |
PURPOSE:To largely improve the flexibility of circuit constitution and the integration degree by a method wherein wells and the same conductivity type layer are buried in a substrate, thus the wells are connected to each other, and a potential is supplied to each well. CONSTITUTION:N-epitaxial layers 3 are superposed on the Si substrate 1 wherein a P-layer 2 is buried, and the P-wells 4 are formed by superposing on the P- layer 2. Thereafter, PchMOSs are formed on the layers 3 and NchMOSs on the P-wells 4 by a known method. Since the wells 4 are connected to each other on the buried layer 2, connection parts 5 can be provided only in the periphery of the device for potential supply to the wells. |
