发明名称 LIQUID PHASE EPITAXIAL FILM OF MAGNETIC GARNET
摘要 PURPOSE:To obtain a growth film of magnetic garnet having a wide transfer margin by such an arrangement wherein when a film of magnetic garnet is caused to epitaxially grown in liquid phase on a substratum composed of Nd3 Ga5O12 of (110) side, the composition of the film is made to become Eu3-x-yLax GdyFe5O12 (O<=x<=0.2, 0<=y<=0.4). CONSTITUTION:On a substratum of Nd3Ga5O12 of (110) side, a film of magnetic garnet of which film composition is Eu3-x-yLaxFe5O12 (0<=x<=0.2, 0<=y<=0.4) is caused to grow at a temperature of 830 deg.C by using liquid phase epitaxy method. By this method, an orthorhombic perpendicular to the film surface aeolotropic material of which (110) axes are such that can be easily magnetized and large aeolotropy exists inside the film can be obtained and its 4pi is 1170G and the Curie temperature is 287 deg.C. Also, actually measured values are such that the peak-to-peak half power width, Hp-p, of the differential spectrum of ferromagnetic resonance absorption is 170 Oe and magnetic wall mobility is muw=1,000cm. sec<-01>, Oe. By this arrangement, a film of which bubble diameter is or less than 1mum and the condition of bubble magnetic wall is S=0 can be obtained.
申请公布号 JPS58188106(A) 申请公布日期 1983.11.02
申请号 JP19820071993 申请日期 1982.04.28
申请人 NIPPON DENKI KK 发明人 MAKINO HIROSHI
分类号 C01G49/02;C01G49/00;C30B29/28;G11C11/14;H01F10/24 主分类号 C01G49/02
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