| 摘要 |
PURPOSE:To obtain a photoconductive member having an excellent photosensitivity characteristic on the long wavelength side and resistance to light fatigue by providing the specific 1st amorphous layer and the 2nd amorphous layer consisting of an amorphous material contg. Si and C on a substrate for the photoconductive member. CONSTITUTION:The 1st amorphous layer 102 of 1-100mu thickness consisting of the 1st layer region 103 of 30Angstrom -50mu thickness consisting of an amorphous material consisting essentially of Si and Ge and contg. H and/or halogen and the 2nd layer region 104 of 0.5-90mu thickness consisting of an amorphous material consisting essentially of Si and contg. H and/or halogen and exhibiting photoconductivity is provided on a substrate 101 for a photoconductive member. The 2nd amorphous layer 105 of 0.003-30mu thickness consisting of an amorphous material contg. Si and C and if necessary, H and/or halogen is provided thereon. The photoconductive member which is free from deterioration phenomena in repeated use and wherein residual potential is not observed at all or is hardly observed is thus obtained. |
