| 摘要 |
PURPOSE:To obtain an SIT wherein the change of current levels particularly at the time of ''OFF'' is less compared with the dimensional change in a transverse direction by a method wherein an n<-> region is provided at the center directly opposed to an n<+> channel provided on the surface of an Si substrate. CONSTITUTION:An n-layer 12 is superposed on the n<+> type Si substrate 11, and an aperture is opened on the surface of the SiO2 layer by an Si3N4 mask 23, thus P<+> 14 layers are buried in. The film 22 is opened to form an aperture by applying a resist mask 24, and then eave parts are formed by etching the side surface. Next, the Si3N4 23 is removed after providing n<+> diffused layers 13, then the SiO2 22 is opened to obtain a window, an Al electrode 16 is superposed via the poly Si electrode layer 15 of the n<+> layers 13, thus an Al electrode 17 is added to the p<+> layer 14. When a gate interval is D and the impurity density of the channel 12 is ND, NDXD<22X10<17>cm<-2>, thus the channel is depleted completely only at the diffusion potential of the p<+> gate, and the potential barrier in the channel is prevented from being extinguished at the drain voltage by setting the difference L between the depth of the p<+> layers 14 and that of the n<+> layers 13 and the interval D at L/D approx.>1. By this constitution, a normally off type device of less change of current levels at the time of ''OFF'' can be obtained. |
