| 摘要 |
<p>O A field induced base ballistic majority carrier transfer transistor comprises first and second epitaxial semi- conductor regions (1, 2) of the same conductivity type, the conductivity of the second region (2) being lower than that of the first region (1) and the second region having a lower energy bandgap than the first region. An emitter electrode (5) is connected, via a high conductivity region (3) epitaxial with the second region (2), to the side of the second region remote from the interface (8). A base electrode (6) makes contact with a part of the second region adjacent the interface (8), and a collector electrode (7) is connected to the side of the first region (1) remote from the interface (8).</p><p>If the transistor is formed of n-type materials, application of a bias voltage across the emitter and base electrodes produces an accumulation layer (9) which serves as the base of the transistor, in the second region (2) adjacent the interface (8).</p> |
