| 摘要 |
PURPOSE:To form a precise fine pattern with superior dry etching resistance, by developing an exposed radiation sensitive negative type resist with a specified mixed solvent. CONSTITUTION:A mixed solvent prepared by mixing a good solvent for a resist selected from acetates each having a 1-5C alkyl group with a bad solvent for the resist selected from alicyclic compounds and 1-5C alkyl ethers of ethylene glycol in about 99/1-1/99 ratio is used as a developer. It is preferable that the vapor pressures of the solvents to be combined are as close as possible to each other. For example, isopropyl acetate is mixed with cyclohexane, or isoamyl acetate is mixed with ethyl ether of ethylene glycol. A radiation sensitive negative type resist layer made of an aromatic vinyl polymer such as polystyrene having >=about 5,000mol.wt. and a narrow mol.wt. distribution is laid on a substrate, exposed to radiation, and developed with said developer to form a pattern. |
