| 摘要 |
PURPOSE:To reduce the area of an element and to increase the density of the element with the contacting margin of a field unit set to zero by ion implanting through a contacting hole to form the same conductive type diffused layer as source and drain diffused layer. CONSTITUTION:A channel stop layer 13, and a field SiO2 film 14 are formed on the surface of a substrate 11. An SiO2 film 15 and a polysilicon layer 16 are formed, patterned, and a gate electrode layer 17 and a gate oxidized film 18 are formed. Then, As ions are implanted to form source and drain diffused layers 19. Subsequently, a PSG film 20 is formed, and a contacting hole 21 is formed. Further, phosphorus ions are implanted through the hole 21 to form the same conductive type diffused layer 22 as the layer 19. Even if the hole 21 is displaced toward a field unit side, the layer 19 is supplemented by the layer 22, the hole 21 is always disposed on the region of the source and drain diffused layer, thereby setting the contacting margin with the field unit to zero. |
