SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT

摘要

A side surface light emitting semiconductor element is provided with an AlGaN layer doped with Mg at a concentration of 5×10<SUP>19</SUP>cm<SUP>-3</SUP> or less; a stripe-shaped ridge formed at an upper portion of a laminated structure including the AlGaN layer and an active layer; and a Schottky barrier formed on an upper surface of the laminated structure other than the ridge from which the AlGaN layer is exposed.