| 摘要 |
PURPOSE:To eliminate the production of a leakage current by forming as a reverse conductive type resistance region a semiconductor region isolated from the surface in one conductive type semiconductor layer, and forming wirings crossing the resistance region through an insulating film on the surface of the semiconductor layer. CONSTITUTION:An N type high density region 9 is formed on a P type semiconductor substrate 10, and an N type low density region 8 is partitioned via a P type insulating region 4. A resistor 1 which has a P type conductive type is buried in the N type low density region 8, led out to the surface of the semiconductor substrate at the ohmic contact units 5 of both ends, and both ends are led via electrodes 7. Crossing wirings 2 are formed through the region 8 and an insulating film 11 of the surface on the region 1. Since the resistance 1 is buried in the region 8 at the part crossing the wirings 2, an inversion layer is produced on the surface of the region 8 along the wirings 2, it does not contact with the region 1, and no leakage current is accordingly produced. |
