Polycrystalline resistor manufacturing method, involves doping polycrystalline resistance path such that one part of resistance path is doped and another part of resistance path is not doped

摘要

The method involves providing a polycrystalline resistance path (110), where the resistance path comprises a semiconductor material e.g. silicon. The polycrystalline resistance path is doped in a manner such that one part (111) of the polycrystalline resistance path is doped and another part (112) of the polycrystalline resistance path is not doped. An implanted protective layer (140) is produced on the latter part of the polycrystalline resistance path. Independent claims are also included for the following: (1) a polycrystalline resistor comprising a polycrystalline resistance path (2) a device for providing a layout of polycrystalline resistor.