Magnetic field sensor e.g. giant magneto resistance sensor, for measuring magnetic field orientation, has spin valve layer and tunnel structures with layer positions, whose magnetization`s orientations are perpendicular to each other

摘要

The sensor has a giant magneto resistance spin valve layer structure (SV) including magnetically impressed layer position (PL1) with a firmly lying magnetization. A tunneling magneto resistance tunnel structure (MTJ) includes another position (PL2) with a firmly lying magnetization. A magnetic sensor layer is arranged in an area between a non-magnetic metallic intermediate layer and a tunnel barrier layer (TB). Orientations of the magnetization of the positions are arranged perpendicular to each other such that a cosine dependency of sensor signals is shifted to each other around 90 degrees.