| 摘要 |
PURPOSE:To obtain a limiter diode which has less transmitting power and excellent power resistance by sequentially forming a P type layer, an I-type layer and an N type layer on the upper surface of an N type substrate, and selectively forming the P type region in the N type region. CONSTITUTION:Boron of high density is diffused in an arsenic-added N type silicon substrate 2 to form a P type layer 17, an I-type layer 1 is epitaxially grown, phosphorus is diffused to form an N type layer 18, boron is selectively diffused in a lattice state to form a P type region 19. Oxidized films 20, 21 are formed, Ti/platinum/gold electrode 5 are formed, and a disc-shaped resist 23 is formed. Thereafter, mesa etching is executed, titanium/gold is deposited to for a conductive strip 16, a back surface electrode 4 is formed, thereby completing a diode. This limiter diode has high isolation, 15kW of power resistance, the incident peak power when the transmitting power is 20W is 25kW, and when used for the front stage of 2-stage limiter, the maximum incident peak power to be applied becomes 15kW. |
