发明名称 |
Method for fabricating CMOS devices with guardband |
摘要 |
A CMOS process which provides a self-aligned guardband in a high density circuit is disclosed. A polysilicon masking member is used to define a well and also to provide alignment for the guardband. A single plasma etching step etches silicon nitride in one area and both silicon nitride and polysilicon in another area prior to growth of field oxides.
|
申请公布号 |
US4412375(A) |
申请公布日期 |
1983.11.01 |
申请号 |
US19820387050 |
申请日期 |
1982.06.10 |
申请人 |
INTEL CORPORATION |
发明人 |
MATTHEWS, JAMES A. |
分类号 |
H01L27/08;H01L21/762;H01L21/8238;H01L29/06;H01L29/78;(IPC1-7):H01L21/26 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|