Materials and methods for plasma etching of aluminum and aluminum alloys

摘要

A method for etching a layer of aluminum or aluminum alloy on a semiconductor wafer using the steps: disposing the wafer on one of a pair of electrode structures in a closed chamber; communicating into the chamber a reactive gas mixture comprising a principal gas mixture of BCl3 and Cl2 and a dopant gas of oxygen and fluorocarbon gas; and supplying radio frequency electrical energy to one of the electrode structures to create a plasma of the reactive gas mixture for etching the aluminum layer.