| 摘要 |
<p>PURPOSE:To increase the contrast ratio of picture, by constituting the reflection electrode in picture display unit as the metal reflection electrode having flat surface. CONSTITUTION:After forming MOS type tansistor 1, openings 10 and 11 are made on the insulation layer 12 consisting of oxide Si, and aluminum evaporation is made on the entire surface of semiconductor substrate. After that, aluminum on the openings 10, 11 is remained with selection through the use of photo mask. Next, the damage caused at evaporation is restored with aluminum sintering, and ohmic contact is formed among the aluminum 18, 19 and the drain 4 and the source 5 on the openings 11, 10. After that, with the method giving less damage to the semiconductor substrate such as resistance heating evaporation, aluminum evaporation is made with the entire surface of substrate again and a given patterning is made, allowing to establish the metal electrodes 8, 9. Thus, most of the reflection metal electrode 9 is not subjected to heat treatment, then the condition of mirror surface after evaporation can be maintained, allowing to increase the contrast ratio of picture.</p> |
