| 摘要 |
PURPOSE:To aim at enlargement of the diameter of an ion beam and enable the semiconductors and metals in an electron device manufacturing process to be subjected to the collected bulk handling of the ion beam etching, by arranging an anode electrode inside and outside a single cathode electrode concentrically or parallelly with the single cathode electrode. CONSTITUTION:There is a rod-shaped anode electrode 22 in the center of an ion source and a cylindrical type cathode electrode 21 on the outside of the circle concentric with the anode 22. Besides, there is the second anode electrode 26 on the outside of the concentric circle. Further, there is a gas introduction port 23 that guides the gas between the anode electrode 22 and cathode electrode 21 and between the cathode electrode 21 and second anode electrode 26. Furthermore, there is a solenoid coil 24 outside the ion source. Since the ion in the plasma generated inside and outside the cathode electrode 21 is drawn by a lead-out electrode 25, a sample to be etched just under the ion source can be etched. |
