| 摘要 |
<p>A method of fabricating a semiconductor device is provided to prevent damage of an isolation layer, on which a passing gate is formed, by simultaneously etching a gate area and a bit line contact area. A semiconductor substrate(10) with an isolation layer(20) is prepared, and then a gate area and a bit line contact area are etched to form a recess(40). A gate insulating layer(50) is formed on a surface of the recess, and a gate material layer is deposited to fill the recess, and then the gate material layer formed in the recess is etched to form a first contact hole through which the bit line contact active area is exposed. A first junction area is formed in a surface of the substrate under the first contact hole. The gate material formed on the substrate is etched to form a second contact hole, as well as a first gate(G1) on the isolation layer and a second gate(G2) on both sides of the recess. A second junction area is formed in the surface of the substrate under the second contact hole, and then the plug conductive layer in the first and second contact holes is buried to form a landing plug(110).</p> |
