发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate the generation of defects after an assembling process and thereby to improve reliability by a method wherein a part or the entirety of the surface, except where an electrode window is located, of a semiconductor chip provided with a UV-erasable memory device is covered by a UV- transmitting resin before the whole chip is sealed in a sealing resin. CONSTITUTION:On a semiconductor chip 1, a protecting film 3 is formed and an electrode window 2 is provided, after which a uniform thickness of a polyimide resin 8 is applied. A process follows wherein the polyimide resin 8 is patterned as required by using a photoengraving device, the semiconductor chip 1 is exposed to UV-rays fro the erasure of memory in storage, and a molding material 7 is employed for the sealing of the entirety including the semiconductor chip 1. In such a design, the UV-transmitting polyimide resin 8 buffers a local stress created between the semiconductor chip 1 and the molding material 7. This design eliminates semiconductor element defects attributable to stress between the molding material 7 and a semiconductor element in a conventional mold package assembling process or the local stress due to molding material serving as a filler and, at the same time, improves a mold package product in its resistance against moisture.</p>
申请公布号 JPS62214649(A) 申请公布日期 1987.09.21
申请号 JP19860057468 申请日期 1986.03.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 IKEDA SHINGO
分类号 H01L23/28;G11C16/18;H01L21/8247;H01L23/29;H01L23/31;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L23/28
代理机构 代理人
主权项
地址