发明名称 PREPARATION OF HIGH-PURITY SILICON
摘要 PURPOSE:To prepare high-purity silicon by continuous and safe operation economically, by making a gas to prevent silicon from precipitating flow into the vicinity of an inner wall of a reactor for depositing silicon on fine particles of high-purity silicon forming a fluidized bed. CONSTITUTION:In a production unit for high-purity silicon consisting of the fluidized bed reactor 1 and the electric furnace 7, the seed silicon fine particles 8 are supplied from the feed pipe 3 to it, a halosilane gas such as trichlorosilane, etc. and hydrogen gas are fed from the reaction gas feed pipe 4, they are heated about 800-1,300 deg.C by the electric furnace 7, and silicon is precipitated on the surfaces of the fluidized silicon articles 8, to form high-purity silicon granules. The porous inner cyclinder 9 is set in the reaction column 2 of the reactor 1, a gas to prevent silicon from precipitating or to control it, introduced from the gas feed pipe 6 for preventing precipitation, is sent from the pore parts 10 of the cylinder 9 to the reaction chamber, so that silicon is prevented from being deposited on the inner wall of the inner cylinder 9.
申请公布号 JPS58185426(A) 申请公布日期 1983.10.29
申请号 JP19820066072 申请日期 1982.04.20
申请人 HITACHI SEISAKUSHO KK 发明人 UTAKA MASATOSHI
分类号 C01B33/02;C01B33/027;C23C16/442 主分类号 C01B33/02
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