| 摘要 |
PURPOSE:When the crystal is pulled up from the melt phase, the crystal to be pulled up is surrounded with a material containing the element constituting the crystal to reduce the dislocation density of the pulled-up crystal. CONSTITUTION:A single crystal of GaAs grows, when a seed crystal of GaAs 15 is brought into contact with GaAs melt in the quartz crucible 11 and gradually pulled up. At this time, a cylinder 2 of a material containing the element constituting the crystal is set in the crucible so that it surrounds the crystal 16. The cylinder is made of GaAs or quartz tube bearing polycrystalline GaAs on the inner surface. |
