| 摘要 |
PURPOSE:To form a thick carbon film having high adhesivity, by depositing a carbide film to the substrate, and depositing ionized carbon thereto. CONSTITUTION:The vacuum chamber 10 of a high-frequency ion plating device, etc. is evacuated in high vacuum, Ar gas, etc. is introduced into the chamber 10 through the gas inlet 12, and the surface of the metallic substrate 9, e.g. Al plate, is cleaned by bombardment. The silicon 18 contained in the crucible 13 is evaporated by the irradiation with electron beam emitted from the electron gun 16 and deflected by the deflector 17. When the silicon 18 begins to evaporate, CH4, etc. is introduced through the gas inlet 12 into the chamber 10 and decomposed by high-frequency electric field to bond the carbon atom with the evaporated silicon particle and to form an SiC film on the substrate 9. The substrate 9 is mounted in an ionizing film-forming device, and a thick carbon film is deposited on the SiC film by ionizing the vapor of a compound having carbon component. A thick carbon film can be deposited in high adhesivity to the substrate by this process. |
