| 摘要 |
PURPOSE:To form a nitride film having good quality and to improve the rate of growth by conducting the activated nitrogen formed in an electric discharge chamber disposed separately from a reaction chamber through a non-straight transport pipe to the reaction chamber and nitriding a sample directly. CONSTITUTION:The gas contg. nitrogen supplied through a gas introducing port 21 into a vacuum vessel is dissociated by electric discharge with the microwave electric power introduced in an electric discharge chamber 16 so that activated nitrogen of a long life is formed. The activated nitrogen is transported through a non-linear transport pipe 29 for activated nitrogen into a reaction chamber 18 provided isolatedly from the chamber 16. The surface of a heated sample 26 in the chamber 18 is nitrided directly. The nitride film having good quality is formed at a high growth rate by the above-mentioned device. |
