| 摘要 |
PURPOSE:To remove the effect of series resistance by a method wherein a gate electrode, a gate insulating film and an island-shaped amorphous silicon thin film are successively formed on an insulating substrate,and source and drain electrodes are formed on both sides of the thin film. CONSTITUTION:A gate electrode 2 is formed on an insulated substrate 1, and a gate insulating film 3 is formed thereon. Then, an island-like amorphous silicon thin film 4, whereon the gate electrode 2 will be aligned, is formed on the gate insulating film 3. Subsequently, a source electrode 5, which will be ohmic contacted, and a drain electrode 6 are formed on both side faces of the amorphous silicon thin film 4. |
