| 摘要 |
<p>PURPOSE:To eliminate an initializing program, by changing the size of a transistor including the channel length, channel width, etc. of an inverter pair of a memory cell of a storage device so that the memory cell is set at the initialized value when a power supply is applied. CONSTITUTION:For instance, an n<+> diffusion region 13 is added to change the channel width of a driving transistor TR2 of the 2nd inverter circuit. Thus the size of the TR is changed to lower the ON level less than a TR1. As a result, the potentials of the TR1 and TR2 are fixed when the power supply is applied to a memory cell. Then the logic of bit is stably fixed for the memory cell, and the initialization is performed.</p> |
