| 摘要 |
PURPOSE:To simplify the constitution of a mask by a method wherein, utilizing the thermal deformation of photoresist, the photoresist before and after deformation is used as a mask in self-alignment technique. CONSTITUTION:An oxide film 12 is formed on the whole surface of an N type silicon substrate 11, and the photoresist 13 of desired pattern is covered on the above. Then, a P type base region 14 is formed by ion-implantating P type impurities, and the photoresist 13 is deformed by baking the substrate 11. Then, using the deformed photoresist 13 as a mask, N type impurities are selectively ion-implanted, and an N<+> type emitter region 15 is formed in the P type base region 14. |
