| 摘要 |
PURPOSE:To selectively deposit a metal film only on the surface of a semiconductor such as Si, by exciting a semiconductor with light having an energy larger than the forbidden band width of the semiconductor to perform a photosensitized reduction on the semiconductor surface. CONSTITUTION:An SiO2 film 22 is formed on a P type Si substrate 21 by means of a wet oxidizing method. A positive photoresist 23 is rotataionally applied onto the SiO2 film 22, and a pre-baking is carried out. The resist 23 is exposed in a desired pattern by means of an exposure machine and then dipped in an alkaline developer to form a resist pattern 24. This sample is dipped in an aqueous NH4F solution to selectively etch the SiO2 film 22 for forming a pattern of the SiO2 film 22. Thereafter, the positive resist 23 is removed by employing an O2 plasma ashing apparatus. The sample is placed in a smaple chamber, which is then evacuated. Thereafter, an Ar-diluted WF6 is introduced into the sample chamber to deposit a W film on the sample. |
