| 摘要 |
PURPOSE:To obtain a more complete symmetrical characteristics for the titled transistor by a method wherein two different type transistors of the same shape and size are formed on both one main surface and the other main surface of a chip respectively. CONSTITUTION:The emitter regions 27 and 33, the base regions 26, 32 and the collector regions 22a, 24a of an N-P-N transistor (Tr) 30 and a P-N-P Tr 36 are all formed in the same shape and size. As a result, a completely symmetrical characteristics are given to the Tr 30 and Tr 31, and excellent characteristics as complementary transistors can be obtained. Also, as said Tr 30 and Tr 31 are constituted in cascade mode, the degree of integration of the transistors can be improved and they can also be made smaller in size. |
