| 摘要 |
PURPOSE:To contrive reduction in size of the chips for the titled MOSFET by a method wherein the MOSFET part is formed along one wall surface of a V- shaped groove provided on one surface of a semiconductor substrate and a load part is formed along the other wall surface of the groove. CONSTITUTION:An MOSFET Tr part is formed along one wall surface 1A of the V-shaped groove 1 provided on one surface of the semiconductor substrate 2, and the load L part is formed along the other wall surface 1B. The formation of the load L part at the V-shaped groove 1 part enables to reduce the area occupied by said load L on the semiconductor substrate 2. As a result, the chip can be reduced in size, thereby enabling to cut down the cost of the MOSFET which is formed into an integrated circuit. |
