| 摘要 |
PURPOSE:To implant ions efficiently, by selectively forming a photosensitive polyimide material on one main surface of a semiconductor substrate and selectively introducing an impurity into the semiconductor substrate with the photosensitive polyimide material employed as a mask. CONSTITUTION:An SiO2 thin layer 2 is formed on an Si substrate, and a photosensitive polyimide precursor thin layer 7 is applied on the SiO2 thin layer into a predetermined thickness. With an optical mask employed, all the polyimide precursor thin layer 7 is exposed except for a region 5 and then developed with a developer having dimethylacetamide as its principal component. The precursor thin layer 7 is heat-treated to form a polyimide film 7'. With the polyimide film 7' used as a mask, ions are implanted to form a high-concentration impurity region 6 in the region 5. After the polyimide film is all removed by a treatment with a hydrazine solution, an annelaing is effected in an N2 gas to form an impurity-diffused layer. |
