| 摘要 |
PURPOSE:To contrive improvement in characteristics and optimization of the titled semiconductor device by a method wherein the gate oxide film of both gate transistors are formed independently in the semiconductor device having a stacked gate transistor and a single gate transistor. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a silicon substrate 1, and after an ion implantation has been performed on the memory cell transistor part A alone, a polycrystalline silicon film 4 is formed on the whole surface. Then, an interlayer oxide film 5 and a polycrystalline silicon film 6 are formed, and a gate AG is formed using a photolithographic technique. Subsequently, a gate oxide film 7 and a polycrystalline silicon film 8 are formed, and a gate BG is formed. Then, source and drain diffusion layers 9 and 10 are formed by diffusing AS, and an intermediate insulating film 11 is formed. Subsequently, both diffusion layers 9 and 10 and gates AG and BG are connected using a photolithographic technique, and then an Al wiring 12 is performed. |
